VN05HSP

Rise Time :
Fall Time :
Supply Voltage - Max :
Supply Voltage - Min :
Product :
Package / Case :
Mounting Style : SMD/SMT
Packaging : Tube
Maximum Operating Temperature : + 150 C
Type : High Side
Maximum Power Dissipation : 52000 mW
Supply Current : 0.05 mA


Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Brekdown Voltage	Internally Clamped	V
IOUT	Output Current (cont.)	12	A
IR	Reverse Output Current	-12	A
IIN	Input Current	±10	mA
VCC	Supply Voltage (continuous)	40	V
VCC	Supply Voltage (pulsed)	60	V
-VCC	Reverse Supply Voltage	-4	V
ISTAT	Status Current	±10	mA
VESD	Electrostatic Discharge (1.5K,100pF )	2000	V
Ptot	Power Dissipation at TC25°C	52	W
Tj	Junction operating temperature	-40 to 150
Tstg	Storage Temperature	-55 to 150
ERB	Power Mos Avalanche Energy	350	mJ

Description

The VN05HSP is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the chip from over temperature and short circuit.The input control is 5V logic level compatible.The open drain diagnostic output of VN05HSP indicates open circuit (no load) and over temperature status.