VN02AN

Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 7 A IR Reverse Output Current -7 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4 V ISTAT St...

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SeekIC No. : 004542343 Detail

VN02AN: Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 7 A IR Reverse Output Current -7 ...

floor Price/Ceiling Price

Part Number:
VN02AN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/2

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Product Details

Description



Specifications

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Brekdown Voltage

60

V

IOUT

Output Current (cont.)

7 A

IR

Reverse Output Current

-7

A

IIN

Input Current

±10 mA

-VCC

Reverse Supply Current

-4

V

ISTAT

Status Current (sink)

±10 mA
VESD

Electrostatic Discharge (1.5K,100pF )

2000 V

Ptot

Power Dissipation at TC85°C

31

W

Tj

Junction operating temperature

-40 to 150

Tstg

Storage Temperature

-55 to 150




Description

The VN02AN is a monolithic device made using STMicroelectronics VIPower Technology,intended for driving resistive or inductive loads with one side grounded.Built-in thermal shut-down protects the chip from over temperature and short circuit.

The VN02AN diagnostic output indicates an over temperature status.Fast turn-off of inductive load is achieved by negative (-18 V) load voltage at turn-off.




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