VN0106NE

The VN0106NE belongs to VN02 family. These enhancement-made (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coetitcient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- tnduced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range ot switching and amplifying applications where high break- down voltage, high input impedance, low input capacitance, and tast switching speeds are desired. The VN0106NE can applicated in (1)motor control; (2)converters; (3)amplifiers; (4)switches; (5)power supply circuits; (6)drivers (relays, hammers, solenolds, lamps, memories, displays, bipolar transistors, etc.).

The features of VN0106NE can be summarized as (1)freedom from secondary breakdown; (2)low power drive requirement; (3)4 independent channels; (4)low CISS and fast switching speeds; (5)4 electrical and military versions available; (6)high input impedance and high gain.

The thermal characteristic of VN0106NE are (1)ID continuous&IDR(single dir): 0.32A; (2)ID pusled+& IDRM+: 1.75A; (3)power dissipation @ TC=25°C: 0.6W; (4)ja(°C/W):275; (5)jc(°C/W):208.