Transistors RF GaAs LNA FET in Microcap DC-18GHz
VMMK-1218-TR1G: Transistors RF GaAs LNA FET in Microcap DC-18GHz
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Technology Type : | EpHEMT | Frequency : | 10 GHz | ||
Gain : | 9 dB | Noise Figure : | 0.81 dB | ||
Forward Transconductance gFS (Max / Min) : | 200 mS | Drain Source Voltage VDS : | 5 V | ||
Gate-Source Breakdown Voltage : | - 5 V to 1 V | Continuous Drain Current : | 100 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 300 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | WLP 0402 |