Features: • Utilizing InGaN technology• Very low thermal resistance, high optical power• Optical efficiency 40 lm/W at 100 mA• Luminous intensity and color grouping• Luminous intensity ratio per package unit IVmax/IVmin 1.6• ESD-withstand voltage: up to 1 kV ac...
VLMW82: Features: • Utilizing InGaN technology• Very low thermal resistance, high optical power• Optical efficiency 40 lm/W at 100 mA• Luminous intensity and color grouping• Lu...
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PARAMETER | TEST CONDITION | SYMBOL | VALUE | UNIT |
Forward current | IF | 500 | mA | |
Power dissipation | Ptot | 2150 | mW | |
Junction temperature | Tj | +125 | ||
Surge current t < 10 s, d = 0.1 |
IFM | 1000 | mA | |
Operating temperature range | Tamb | - 40 to + 100 | ||
Storage temperature range | Tstg | - 40 to + 100 | ||
Thermal resistance junction/pin | Metal core pcb 960 mm² per LED | RthJP | 20 | K/W |
The VLMW82.. is one of the most robust and light efficient LEDs in the market. The small size and wide viewing angle make these LEDs a prime choice for backlighting applications and front panel indicators, especially where space is at a premium. Its ceramic package makes VLMW82 the ideal light source in applications of high thermal considerations allowing the additional current drive for a maximum light output while maintaining a high service life of up to 50K h. The reflector inside this package is filled with a mixture of silicone and TAG phosphor. The TAG phosphor converts the blue emission partially to yellow, which mixes with the remaining blue to white.