Features: • Utilizing InGaN technology• Very low thermal resistance, high optical power• Optical efficiency 24 lm/W• Luminous intensity and color grouping• Luminous intensity ratio per package unit IVmax./IVmin. 1.6• ESD-withstand voltage: up to 1 kV according ...
VLMW611: Features: • Utilizing InGaN technology• Very low thermal resistance, high optical power• Optical efficiency 24 lm/W• Luminous intensity and color grouping• Luminous int...
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Parameter | TEST CONDITION | SYMBOL | VALUE | UNIT |
Forward current | IF | 150 | mA | |
Power dissipation | Ptot | 650 | mW | |
Junction temperature | Tj | +125 | ||
Surge current Tj < 400 ms, d = 0.3, Tj < 65 °C |
350 | mA | ||
Operating temperature range | Tamb | - 40 to + 100 | ||
Storage temperature range | Tstg | - 40 to + 100 | ||
Thermal resistance junction/pin | Metal core pcb 960 mm² per LED | RthJP | 50 | K/W |
Thermal resistance junction/ambient | RthJA | 100 | K/W |
The VLMW611. is one of the most robust and light efficient LEDs in the market. VLMW611's ceramic package makes it the ideal light source in applications of high thermal considerations allowing the additional current drive for a maximum light output while maintaining a high service life of up to 50K h. The reflector inside this package is filled with a mixture of silicone and TAG phosphor. The TAG phosphor converts the blue emission partially to yellow, which mixes with the remaining blue to white.