Features: • SMD LED with exceptional brightness• Luminous intensity categorized• Compatible with automatic placement equipment• EIA and ICE standard package• Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020B•...
VLMPG30E1F2-GS08: Features: • SMD LED with exceptional brightness• Luminous intensity categorized• Compatible with automatic placement equipment• EIA and ICE standard package• Compatible...
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PARAMETER | TEST CONDITION | SYMBOL | VALUE | UNIT |
Reverse voltage2) | VR | 5 | V | |
DC Forward current | Tamb 80 | IF | 20 | mA |
Surge forward current | tp 10 s | IFSM | 0.2 | A |
Power dissipation | PV | 60 | mW | |
Junction temperature | Tj | 125 | ||
Operating temperature range | Tamb | - 40 to + 100 | ||
Storage temperature range | Tstg | - 40 to + 100 | ||
Thermal resistance junction/ambient | mounted on PC board (pad size > 16 mm2) |
RthJA | 400 | k/W |
This VLMPG30E1F2-GS08 device has been designed to meet the increasing demand for InGaN technology.
The package of the VLMPG/YG30.. is the PLCC-2. VLMPG30E1F2-GS08 consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy.