Features: • Utilizing AlInGaP technology• Very low thermal resistance• Optical efficiency 40 lm/W at 100 mA• Luminous intensity and color grouping• Luminous intensity ratio per package unit IVmax./IVmin. 1.6• ESD-withstand voltage: up to 2 kV according to JESD2...
VLMK82EAFA-GS18: Features: • Utilizing AlInGaP technology• Very low thermal resistance• Optical efficiency 40 lm/W at 100 mA• Luminous intensity and color grouping• Luminous intensity r...
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PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
Forward current |
IF |
400 |
mA | |
Power dissipation |
Ptot |
1360 |
mW | |
tion temperature |
Tj |
+ 115 |
||
Surge current t < 10 s, d = 0.1 |
IFM |
1000 |
mA | |
Operating temperature range |
Tamb |
- 40 to + 100 |
||
Storage temperature range |
Tstg |
- 40 to + 100 |
||
Thermal resistance junction/pin | Metal core pcb 960 mm² per LED |
RthJP |
20 |
K/W |
The VLMK/Y82.. is one of the most robust and light efficient LEDs in the market. Its ceramic package makes VLMK/Y82.. the ideal light source in applications of high thermal considerations allowing the additional current drive for a maximum light output while maintaining a igh service life of up to 50K h.