Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB and TO-262AA package)...
VI40150C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (...
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For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
PARAMETER | SYMBOL |
V40150C |
VF40150C |
VB40150C |
VI40150C |
UNIT |
Maximum repetitive peak reverse voltage | VRRM |
150 |
V | |||
Maximum average forward rectified current (Fig. 1) | VF(AV) |
40 20 |
V | |||
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
160 |
A | |||
Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
Operating junction and storage temperature range | TJ, TSTJ |
- 55 to + 150 |