Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020C, LF max peak of 245 (for TO-263AB package)• Solder Dip 260 , 40 seconds (for TO-220 &...
VI40120C: Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...
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PARAMETER |
SYMBOL |
V40120C |
VB40120C |
VI40120C |
UNIT |
Maximum repetitive peak reverse voltage |
VRRM |
120 |
V | ||
Maximum average forward rectified current per device (see Fig. 1) per diode |
IF(AV) |
40 20 |
A | ||
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
250 |
A | ||
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz |
IRRM |
1.0 |
A | ||
Voltage rate of change (rated VR) |
dv/dt |
10000 |
V/s | ||
Operating junction and storage temperature range |
TJ, TSTG |
- 20 to + 150 |