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VF30100C

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)• Solder dip 260 °C, 40 s (for TO-220AB, ...

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VF30100C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...

VF30100C Data Sheet

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Part Number:
VF30100C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/E




Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection






Specifications

PARAMETER SYMBOL V30100C VF30100C VB30100C VI30100C UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current
(Fig. 1)
per device
per diode		 IF(AV) 30
15		 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode		 IFSM 160 A
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min		 VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 40 to + 150





Description

V30100C, VF30100C, VB30100C & VI30100C datasheet




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