Application• Photo interrupters• Miniature switches• Counters• Encoders• Position sensorsSpecifications PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector to Emitter Voltage VCEO 70 V Emitter to Base Voltage VEcO 5 V C...
VEMT3700F: Application• Photo interrupters• Miniature switches• Counters• Encoders• Position sensorsSpecifications PARAMETER TEST CONDITION SYMBOL VALUE UNIT C...
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PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
Collector to Emitter Voltage |
VCEO |
70 |
V | |
Emitter to Base Voltage |
VEcO |
5 |
V | |
Collector Current |
IC |
50 |
mA | |
Collector peak current | tp/T 0.1, tp 10 s |
ICM |
100 |
mA |
Power dissipation |
PV |
100 |
W | |
Junction Temperature |
Tj |
100 |
||
Operating ambient temperature |
Tamb |
- 40 to + 100 |
||
Storage temperature range |
Tstg |
- 40 to + 100 |
||
Soldering temperature | Acc. reflow solder profile fig. 10 |
Tsd |
260 |
|
Thermal resistance junction/ambient | Soldered on PCB with pad dimensions: 4 mm x 4 mm |
RthJA |
400 |
K/W |
VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm IR emitters.Silicon NPN Phototransistor, RoHS Compliant