VEC2901

Features: • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.• Ultrasmall package permitting applied sets to be made small and slim.Pinout Specifications Absolute maximum ratings VCBO [V] 100 VCEO [V]...

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SeekIC No. : 004541102 Detail

VEC2901: Features: • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.• Ultrasmall package permitting applied sets to be made sma...

floor Price/Ceiling Price

Part Number:
VEC2901
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
• Ultrasmall package permitting applied sets to be made small and slim.





Pinout






Specifications

Absolute maximum ratings
VCBO [V] 100
VCEO [V] 50
IC [A] 5
PC [W] 1.1
When mounted on ceramic substrate (900mm²*0.8mm)
VDSS [V] 30
VGSS [V] 10
ID [A] 0.15
PD [W] 0.25
Electrical characteristics
hFE min 250
hFE max 400
VCE [V] 2
IC [mA] 500
Cob typ [pF] 26
VCE(sat) typ [V] 0.075
VCE(sat) max [V] 0.15
IC [A] 2
IB [mA] 40
VGS(off) min to max [V] 0.4 to 1.3
|yfs| typ [S] 0.22
RDS(on)1 typ [] 2.9
RDS(on)1 max [] 3.7
VGS [V] 4
ID [A] 0.08
RDS(on)2 typ [] 3.7
RDS(on)2 max [] 5.2
VGS [V] 2.5
ID [A] 0.04
Ciss typ [pF] 7
Qg typ [nC] 1.58


Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage VCBO 100 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 5 A
Collector Current (Pulse) ICP 8 A
Collector Dissipation PC

Mounted on a ceramic board (900mm2*0.8mm) 1unit

1.1 W
Junction Temperature

Tj

150

Storage Temperature Tstg --55 to +150
[FET]
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current ID 150 mA
Drain Current (Pulse) IDP

PW10s, duty cycle1%

600 mA
Allowable Power Dissipation PD 0.25 W
Channel Temperature

Tch

150

Storage Temperature Tstg --55 to +150





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