Features: • DC / DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.[MOSFET]• Low ON-resistance• Ultrahigh-speed switching.• 1.8V drive.[SBD]• Low switching nois...
VEC2819: Features: • DC / DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.[MOSFET]• L...
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Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
• DC / DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Low switching noise.
• Low leakage current and high reliability due to planar structure.
Absolute maximum ratings | |
---|---|
VDSS [V] | 20 |
ID [A] | 3.5 |
PD [W] | 1
When mounted on ceramic substrate (1200mm²*0.8mm) 1unit |
VRRM [V] | 30 |
IO [A] | 2 |
Electrical characteristics | |
---|---|
VGS(off) min to max [V] | 0.4 to 1.4 |
|yfs| typ [S] | 5.8 |
RDS(on)1 typ [] | 0.077 |
RDS(on)1 max [] | 0.108 |
VGS [V] | 2.5 |
ID [A] | 1 |
RDS(on)2 typ [] | 0.112 |
RDS(on)2 max [] | 0.168 |
VGS [V] | 1.8 |
ID [A] | 0.3 |
Ciss [pF] | 680 |
VF max [V] | 0.5 |
IF [A] | 2 |
IR [µA] | 30 |
VR [V] | 15 |
trr max [ns] | 20 |
IF=IR [mA] | 100 |
Parameter | Symbol | Conditions | Rating | Unit |
[MOSFET] | ||||
Drain-to-Source Voltage | VDSS | -20 | V | |
Gate-to-Source Voltage | VGSS | ±10 | V | |
Collector current (DC) | ID | -3.5 | A | |
Drain Current (Pulse) | IDP | PW10s, duty cycle1% | -14 | A |
Allowable Power Dissipation | PD | Mounted on a ceramic board (900mm2*0.8mm) 1unit | 1.0 | W |
Channel Temperature | Tch | 150 | ||
Storage temperature | Tstg | -55 to +125 | ||
[SBD] | ||||
Repetitive Peak Reverse Voltage | VRRM | 30 | V | |
Nonrepetitive Peak Reverse Surge Voltage | VRSM | 30 | V |