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VEC2818

Features: • DC / DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.[MOSFET]• Low ON-resistance• Ultrahigh-speed switching.• 1.8V drive.[SBD]• Short reverse reco...

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SeekIC No. : 004541098 Detail

VEC2818: Features: • DC / DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.[MOSFET]• L...

VEC2818 Data Sheet

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Part Number:
VEC2818
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• DC / DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.






Pinout






Specifications

Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET
Drain-to-Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
-3.5
A
Drain Current (Pulse)
IDP
PW10s, duty cycle1%
-141
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (1200mm2X0.8mm) 1unit
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
2
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
5
A
Junction Temperature
Tj
-55 to +125
°C
Storage Temperature
Tstg
-55 to +125
°C
Marking : CQ

Absolute maximum ratings
VDSS [V] 20
ID [A] 3.5
PD [W] 1
When mounted on ceramic substrate (1200mm²*0.8mm) 1unit
VRRM [V] 30
IO [A] 2
Electrical characteristics
VGS(off) min to max [V] 0.4 to 1.4
|yfs| typ [S] 5.8
RDS(on)1 typ [] 0.077
RDS(on)1 max [] 0.108
VGS [V] 2.5
ID [A] 1
RDS(on)2 typ [] 0.112
RDS(on)2 max [] 0.168
VGS [V] 1.8
ID [A] 0.3
Ciss [pF] 680
VF max [V] 0.45
IF [A] 2
IR [µA] 1250
VR [V] 15
trr max [ns] 20
IF=IR [mA] 100





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