Features: • DC/DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.• [MOSFET]• Low ON-resistance.• 4V drive.• [SBD]• Short reverse recovery time.• Low...
VEC2815: Features: • DC/DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.• [MOSFET]...
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Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
Absolute maximum ratings | |
---|---|
VDSS [V] | 30 |
ID [A] | 3 |
PD [W] | 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
VRRM [V] | 30 |
IO [A] | 3 |
Electrical characteristics | |
---|---|
VGS(off) min to max [V] | 1.0 to 2.4 |
|yfs| typ [S] | 3.4 |
RDS(on)1 typ [] | 0.065 |
RDS(on)1 max [] | 0.086 |
VGS [V] | 10 |
ID [A] | 1.5 |
RDS(on)2 typ [] | 0.117 |
RDS(on)2 max [] | 0.168 |
VGS [V] | 4 |
ID [A] | 0.7 |
Ciss [pF] | 510 |
VF max [V] | 0.42 |
IF [A] | 3 |
IR [µA] | 1400 |
VR [V] | 15 |
trr max [ns] | 20 |
IF=IR [mA] | 100 |
Operation frequency [kHz] | 650 |
Parameter | Symbol | Conditions | Ratings | Unit |
Drain-to-Source Voltage | VDSS |
-30 | V | |
Gate-to-Source Voltage | VGSS | ±20 | V | |
Drain Current (DC) | ID | -3 | A | |
Drain Current (Pulse) | IDP | PW10s, duty cycle1% | -12 | A |
Allowable Power Dissipation | PD | Mounted on a ceramic board (900mm2✕0.8mm) 1unit | 0.9 | W |
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | -55to+125 | ||
Repetitive Peak Reverse Voltage | VRRM | 30 | V | |
Nonrepetitive Peak Reverse Surge Voltage | VRSM | 30 | V | |
Average Output Current | IO | 3 | A | |
Surge Forward Current | IFSM | 50Hz sine wave, 1 cycle | 20 | A |
Junction Temperature | Tj | -55 to +125 | ||
Storage Temperature | Tstg | -55 to +125 |