Features: • DC/DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.• [MOSFET]• Low ON-resistance.• 4V drive.• [SBD]• Short reverse recovery time.• Low...
VEC2811: Features: • DC/DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.• [MOSFET]...
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Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
Absolute maximum ratings | |
---|---|
VDSS [V] | 30 |
ID [A] | 3 |
PD [W] | 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
VRRM [V] | 30 |
IO [A] | 2 |
Electrical characteristics | |
---|---|
VGS(off) min to max [V] | 1.0 to 2.4 |
|yfs| typ [S] | 3.4 |
RDS(on)1 typ [] | 0.065 |
RDS(on)1 max [] | 0.086 |
VGS [V] | 10 |
ID [A] | 1.5 |
RDS(on)2 typ [] | 0.117 |
RDS(on)2 max [] | 0.168 |
VGS [V] | 4 |
ID [A] | 0.7 |
Ciss [pF] | 510 |
VF max [V] | 0.45 |
IF [A] | 2 |
IR [µA] | 1250 |
VR [V] | 15 |
IF=IR [mA] | 100 |
Operation frequency [kHz] | 650 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
[MOSFET] | ||||
Drain-to-Source Voltage |
VDSS |
-30 |
V | |
Gate-to-Source Voltage |
VGSS |
±20 |
V | |
Drain Current (DC) |
ID |
--3 |
A | |
Drain Current (Pulse) |
IDP |
PW10ms, duty cycle1% |
--12 |
A |
Allowable Power Dissipation |
PD |
Mounted on a ceramic board (900mm2*0.8mm) 1unit |
0.9 |
W |
Channel Temperature |
Tch |
150 |
°C | |
Storage Temperature |
Tstg |
-55 to +125 |
°C | |
[SBD] | ||||
Repetitive Peak Reverse Voltage |
VRRM |
30 |
V | |
Nonrepetitive Peak Reverse Surge Voltage |
VRSM |
30 |
V | |
Average Output Current |
IO |
2 |
A | |
Surge Forward Current |
IFSM |
50Hz sine wave, 1 cycle |
5 |
A |
Junction Temperature |
Tj |
-55 to +125 |
°C | |
Storage Temperature |
Tstg |
-55 to +125 |
°C |