Features: • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting.• Best suited for load switches.• 2.5V drive.• 0.75mm mount highPinoutSpecifications Parameter Symbol C...
VEC2601: Features: • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting.• Best suited for load...
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Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
Parameter | Symbol | Conditions | N-channel | P-channel | Unit |
Drain-to-Source Voltage | VDSS |
30 | -20 | V | |
Gate-to-Source Voltage | VGSS | ±10 | ±10 | V | |
Drain Current (DC) | ID | 0.15 | -3 | A | |
Drain Current (Pulse) | IDP | PW10s, duty cycle1% | 0.6 | -12 | A |
Allowable Power Dissipation | PD | Mounted on a ceramic board (900mm2✕0.8mm) 1unit | 0.9 | 0.9 | W |
Channel Temperature | Tch | 150 | 150 | ||
Storage Temperature | Tstg | -55to+125 |
Absolute maximum ratings | |
---|---|
(Pch) VDSS [V] | 20 |
(Pch) VGSS [V] | 10 |
(Pch) ID [A] | 3 |
(Pch) PD [W] | 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
(Nch) VDSS [V] | 30 |
(Nch) VGSS [V] | 10 |
(Nch) ID [A] | 0.15 |
(Nch) PD [W] | 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
Electrical characteristics | |
---|---|
(Pch) VGS(off) min to max [V] | 0.4 to 1.3 |
(Pch) |yfs| typ [S] | 4.9 |
(Pch) RDS(on)1 typ [] | 0.055 |
(Pch) RDS(on)1 max [] | 0.072 |
(Pch) VGS [V] | 4.5 |
(Pch) ID [A] | 2 |
(Pch) RDS(on)2 typ [] | 0.077 |
(Pch) RDS(on)2 max [] | 0.108 |
(Pch) VGS [V] | 2.5 |
(Pch) ID [A] | 1 |
(Pch) Ciss [pF] | 680 |
(Pch) Qg [nC] | 8.2 |
(Nch) VGS(off) min to max [V] | 0.4 to 1.3 |
(Nch) |yfs| typ [S] | 0.22 |
(Nch) RDS(on)1 typ [] | 2.9 |
(Nch) RDS(on)1 max [] | 3.7 |
(Nch) VGS [V] | 4 |
(Nch) ID [A] | 0.08 |
(Nch) RDS(on)2 typ [] | 3.7 |
(Nch) RDS(on)2 max [] | 5.2 |
(Nch) VGS [V] | 2.5 |
(Nch) ID [A] | 0.04 |
(Nch) Ciss [pF] | 7 |
(Nch) Qg [nC] | 1.58 |