Features: ·Adoption of MBIT process.·High current capacitance.·Low collector-to-emitter saturation voltage.·High speed switching.·Ultrasmall-sized package permitting applied sets to be made small and slim (0.75mm).·High allowable power dissipation.ApplicationCharge line switching, load switching, ...
VEC1106: Features: ·Adoption of MBIT process.·High current capacitance.·Low collector-to-emitter saturation voltage.·High speed switching.·Ultrasmall-sized package permitting applied sets to be made small an...
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Aluminum Electrolytic Capacitors - SMD 10 Volts 10uF 20% 4x5.3
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature |
VCBO VCEO VEBO IC ICP IB PC Tj Tstg |
When mounted on ceramic substrate (900mm2*0.8mm) |
-30 -30 -6 -6 -8 -1.2 1.3 150 -55 to +150 |
V V V A A A W |
Absolute maximum ratings | |
---|---|
VCEO [V] | 30 |
IC [A] | 6 |
PC [W] | 1.3
When mounted on ceramic substrate (250mm²*0.8mm) |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.14 |
VCE (sat) max [V] | 0.21 |
IC [A] | 3 |
IB [mA] | 60 |