Features: High-Density Symmetrically Blocked Architecture
-Sixteen 64 Kbyte Blocks
Avionics Temperature Range
- b40§Cto a125§C
Extended Cycling Capability
-10K Block Erase Cycles
-160K Block Erase Cycles per Chip
Automated Byte Write and Block Erase
-Command User Interface
-Status Register
System Performance Enhancements
-RY/ BY Status Output
-Erase Suspend Capability
Very High-Performance Read
-95 ns Maximum Access Time
SRAM-Compatible Write Interface
Hardware Data Protection Feature
-Erase/Write Lockout during Power Transitions
Industry Standard Packaging
-40-Lead TSOP
ETOXTM III Nonvolatile Flash Technology
-12V Byte Write/Block Erase
Independent Software Vendor Support
-Microsoft* Flash File System (FFS)Pinout
SpecificationsOperating Temperature .......... -40to 125
Temperature Under Bias.......... -40to 125
Storage Temperature ........... -65to 125
Voltage on Any Pin
(except VCC and VPP)
with Respect to GND .......... -2.0V to 7.0V(1)
VPP Program Voltage with
Respect to GND during
Block Erase/Byte Write ....... -2.0V to 14.0V(1, 2)
VCC Supply Voltage
with Respect to GND .......... -2.0V to 7.0V(1)
Output Short Circuit CurrentÀ............100 mA(3)DescriptionIntel's VE28F008 8-Mbit Flash FileTM Memory revolutionizes the design of high performance and durable mass storage memory systems for the Industrial, Avionics and Military markets. With its innovative features like low power, blocked architecture, high read/write performance, and expanded temperature range, any design, or mission, is free from the dependence on battery backed up memory or highly sensitive and slow rotating media drives.
Using the VE28F008 in a PCMCIA 2.1 Flash Memory card, ATA drive or any size or shape module will allow data, application, or operating systems to be updated or collected anywhere, and at anytime. This data on demand feature ensures protection from obsolesce through field or in system software updates.
The VE28F008's highly integrated Command User Interface and Write State Machine, decreases the size and complexity of system software while providing high read, write and erase performance. The sixteen separately erasable 64 Kbyte blocks along with a multiple write data protection system, provides assurance that highly important data will be available when needed.
The VE28F008 is offered in a 40-lead TSOP (Thin Small Outline Package) which is capable of performing in temperatures from b40§Cto a125§C. It employs advanced CMOS circuitry for systems requiring low power consumption and noise immunity. The VE28F008's 95 ns access time provides superior performance when compared to magnetic mass storage
Manufactured on Intel's 0.8 micron ETOXTM III process, the VE28F008 provides the highest levels of quality, reliability and cost effectiveness.