Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,3,8,& full page) -Burst Type (sequential & Interleave)•4 banks operation•All inputs are sampled at the positive edge of the system clock...
VDS7608A4A: Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,3,8,& full page) -Burst Type (sequential & Inter...
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Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs ...
Parameter |
Symbol | Value | Unit |
Voltage on any pin relative to Vss |
VIN, Vout |
-1.0 ~ 4.6 |
V |
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 | V |
Storage temperature |
TSTG |
-55 ~ +150 | |
Power dissipation |
PD |
1 | W |
Short circuit currentI |
IOS |
50 | mA |
The VDS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 words x 8 bits x4 banks.
Synchronous design of VDS7608A4A allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications