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VDD7616A4A

Features: •2.5V for VDDQ power supply•SSTL_2 interface•MRS Cycle with address key programs-CAS Latency (2, 2.5)-Burst Length (2,4 &8)-Burst Type (sequential & Interleave)•4 banks operation•Differential clock input (CK, /CK) operation•Double data rate int...

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SeekIC No. : 004540976 Detail

VDD7616A4A: Features: •2.5V for VDDQ power supply•SSTL_2 interface•MRS Cycle with address key programs-CAS Latency (2, 2.5)-Burst Length (2,4 &8)-Burst Type (sequential & Interleave)&#...

VDD7616A4A Data Sheet

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Part Number:
VDD7616A4A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•2.5V for VDDQ power supply
•SSTL_2 interface
•MRS Cycle with address key programs
 -CAS Latency (2, 2.5)
 -Burst Length (2,4 &8)
 -Burst Type (sequential & Interleave)
•4 banks operation
•Differential clock input (CK, /CK) operation
•Double data rate interface
•Auto & Self refresh
•4096 refresh cycle
•DQM for masking
•Package:66-pins 400 mil TSOP-Type II


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, Vout
-0.5 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.5
W
Short circuit current
IOUT
50
mA



Description

The VDD7616A4A are four-bank Double Data Rate(DDR) Synchronous DRAMs organized as 2,097,152 words x 16 bits x 4 banks.

Synchronous design of VDD7616A4A allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.Data outputs occur at both rising edges of CK and /CK.Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.




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