VCR4N

Continuous Drain Current :
Drain Source Voltage VDS :
Drain Current (Idss at Vgs=0) :
Configuration : Single
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : - 25 V
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-206AA


Features:

· Continuous Voltage-Controlled Resistance
· High Off-Isolation
· High Input Impedance


Application

· Variable Gain Amplifiers
· Voltage Controlled Oscillator
· AGC


Pinout




Specifications

Gate-Source, Gate-Drain Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .−25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Power Dissipation^b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .. . . . .300 mW
Operating Junction Temperature Range . . . . . . . . . . . . . . .  . . . .. . . . −55 to 175
Storage Temperature  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .−65 to 200
Lead Temperature (1/16" from case for 10 sec.)  . . . . . . . . . . . . . . . . . . . . .300
Notes:
a. T_A = 25 unless otherwise noted.
b. Derate 2 mW/above 25


Description

The VCR2N/4N/7N JFET voltage controlled resistors have an ac drain-source resistance that is controlled by a dc bias voltage (VGS) applied to their high impedance gate terminal. Minimum rDS occurs when VGS = 0 V. As VGS approaches the pinch-off voltage, rDS rapidly increases. This VCR2N/4N/7N series of junction FETs is intended for applications where the drain-source voltage is a low-level ac signal with no dc component.