VBT3080S

The VBT3080S is designed as one kind of trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

VBT3080S has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Meets MSL level 1, per J-STD-020, LF maximum peak of 245°C (for TO-263AB package). (5)Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package). (6)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. Those are all the main features.

Some absolute maximum ratings of VBT3080S have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 80V. (2)Its maximum average forward rectified current would be 30A. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 200A. (4)Its non-repetitive avalanche energy at Tj=25°C, L=100mH would be 250mJ. (5)Its peak repetitive reverse current at tp=2us, 1kHz, Tj=38°C per diode would be 1.0A. (6)Its isolation voltage would be 1500V. (7)Its operating temperature and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VBT3080S are concluded as follow. (1)Its breakdown voltage would be typ 80V. (2)Its instantaneous forward voltage per diode would be typ 0.47V at If=5A, and would be typ 0.61V at If=15A. (3)Its reverse current per diode would be typ 70uA and max 1000uA at Ta=25°C and would be typ 23mA and max 45mA at Ta=125°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information of VBT3080S please contact us for details. Thank you!