VBT3060G

DescriptionThe VBT3060G is designed as one kind of dual high-voltage trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.VBT3060G has six features. (1)Trench MOS...

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SeekIC No. : 004540696 Detail

VBT3060G: DescriptionThe VBT3060G is designed as one kind of dual high-voltage trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-in...

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Part Number:
VBT3060G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Description



Description

The VBT3060G is designed as one kind of dual high-voltage trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

VBT3060G has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Meets MSL level 1, per J-STD-020, LF maximum peak of 245°C (for TO-263AB package). (5)Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package). (6)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. Those are all the main features.

Some absolute maximum ratings of VBT3060G have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 60V. (2)Its maximum average forward rectified current would be 30A per device and 15A per diode. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 150A. (4)Its non-repetitive avalanche energy at Tj=25°C, L=60mH would be 120mJ. (5)Its peak repetitive reverse current at tp=2us, 1kHz, Tj=38°C per diode would be 1.0A. (6)Its isolation voltage would be 1500V. (7)Its operating temperature and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VBT3060G are concluded as follow. (1)Its breakdown voltage would be typ 60V. (2)Its instantaneous forward voltage per diode would be typ 0.49V at If=5A, and would be typ 0.53V at If=7.5A. (3)Its reverse current per diode would be max 850uA at Ta=25°C and would be typ 14mA and max 40mA at Ta=125°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about VBT3060G. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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