VBT1080S

DescriptionThe VBT1080S is designed as one kind of trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.VBT1080S has six features. (1)Trench MOS schottky technolo...

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SeekIC No. : 004540682 Detail

VBT1080S: DescriptionThe VBT1080S is designed as one kind of trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc ...

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Part Number:
VBT1080S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Description

The VBT1080S is designed as one kind of trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

VBT1080S has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Meets MSL level 1, per J-STD-020, LF maximum peak of 245°C (for TO-263AB package). (5)Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package). (6)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. Those are all the main features.

Some absolute maximum ratings of VBT1080S have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 80V. (2)Its maximum average forward rectified current would be 10A. (3)Its peak forward surge current 8.3 ms single half sine-wave superimposed on rated load would be 100A. (4)Its non-repetitive avalanche energy at Tj=25°C, L=60mH would be 110mJ. (5)Its peak repetitive reverse current at tp=2us, 1kHz, Tj=38°C would be 1.0A. (6)Its isolation voltage (ITO-220AB only) from terminnal to heatsink t=1 min would be 1500V. (7)Its operating junction and storage temperature range would be from -55°C to 150°C. VBT1080S should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VBT1080S are concluded as follow. (1)Its breakdown voltage would be typ 80V (minimum). (2)Its instantaneous forward voltage would be typ 0.57V at If=5A, Ta=25°C and would be typ 0.67V and max 0.81V at If=10A, Ta=25°C. (3)Its reverse current would be typ 20uA and max 600uA at Ta=25°C and would be typ 10mA and max 20mA at Ta=125°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information of VBT1080S please contact us for details. Thank you!




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