DescriptionThe VBT1080C is designed as one kind of dual trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.VBT1080C has six features. (1)Trench MOS schottky tec...
VBT1080C: DescriptionThe VBT1080C is designed as one kind of dual trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-t...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The VBT1080C is designed as one kind of dual trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VBT1080C has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Meets MSL level 1, per J-STD-020, LF maximum peak of 245°C (for TO-263AB package). (5)Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package). (6)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. Those are all the main features.
Some absolute maximum ratings of VBT1080C have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 80V. (2)Its maximum average forward rectified current would be 10A per device and would be 5A per diode. (3)Its peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode would be 80A. (4)Its non-repetitive avalanche energy at Tj=25°C, L=60mH per diode would be 30mJ. (5)Its peak repetitive reverse current atr tp=2us, 1kHz, Tj=38°C would be 1.0A. (6)Its voltage rate of change (rated Vr) would be 10000V/us. (7)Its isolation voltage (ITO-220AB only) from terminal to heatsink t=1 min would be 1500V. (8)Its operating junction and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of VBT1080C are concluded as follow. (1)Its breakdown voltage would be typ 80V (minimum). (2)Its instantaneous forward voltage per diode would be typ 0.54V at If=3A and Ta=25°C and it would be typ 0.63V and max 0.72V at If=5A and Ta=25°C and it would be typ 0.49V at If=3A and Ta=125°C and it would be typ 0.57V and max 0.66V at If=5A and Ta=125°C. (3)Its reverse current per diode would be typ 12uA and max 400uA at Ta=25°C and would be typ 6mA and max 15mA at Ta=125°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information of VBT1080C please contact us for details. Thank you!