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VB60100C

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder dip 260 , 40 s (for TO-220AB)̶...

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VB60100C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...

VB60100C Data Sheet

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Part Number:
VB60100C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.




Specifications

MAXIMUM RATINGS (TA = 25 unless otherwise noted)
PARAMETER
SYMBOLS
V60100C
 VB60100C
UNITS
Maximum repetitive peak reverse voltage
VRRM
100
 V
Maximum average forward rectified current (Fig. 1) per device
per diode
IF(AV)
60
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
320
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150





Description

V60100C & VB60100C datasheet




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