V8P10 Selling Leads, Price trend, V8P10 DataSheet download, circuit diagram from SeekIC.com

Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C• Compone...

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SeekIC No. : 004540463 Detail

V8P10: Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High...

V8P10 Data Sheet

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Part Number:: V8P10
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Recent History
What is this?

V8P10-E3/86A evaluate
Schottky (Diodes & Rectifiers) 8.0 Amp 100 Volt Single TrenchMOS
V8P10-E3/87A evaluate
Schottky (Diodes & Rectifiers) 8.0 Amp 100 Volt Single TrenchMOS
V8P10HE3/86A evaluate
Schottky (Diodes & Rectifiers) 8.0 Amp 100 Volt Single TrenchMOS

Product Details

Description

Features:

• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

For use in low voltage high frequency inverters, freewheeling,dc-to-dc converters and polarity protection applications.

Specifications

PARAMETER	SYMBOL	V8P10	UNIT
Device marking code		V810
Maximum repetitive peak reverse voltage	V_RRM	100	V
Maximum average forward rectified current (see Fig.1)	I_F(AV)	8	A
Peak forward surge current 10 ms single half sine-wave superimposed on rated load	I_FSM	150	A
Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, Tj = 25 °C	E_AS	100	mJ
Voltage rate of change (rated VR)	dv/dt	10000	V/s
Operating junction and storage temperature range	T_J,T_STG	-40 to + 150	°C

Description

V8P10 datasheet

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V8P10

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