V60120C Selling Leads, Price trend, V60120C DataSheet download, circuit diagram from SeekIC.com

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260, 40 s• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor use in high frequency in...

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SeekIC No. : 004540097 Detail

V60120C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260, 40 s• C...

V60120C Data Sheet

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Part Number:: V60120C
Supply Ability:: 5000

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Upload time: 2024/11/23

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V601 evaluate
US $3.96 - 4.66 / Piece

Enclosures, Boxes, & Cases 14x6-1/4x2-1/2 (1.617cf)1 Comprtmnt
V60100C evaluate
Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses...
V60100C-E3/45 evaluate
Schottky (Diodes & Rectifiers) 60 Amp 100 Volt Dual TrenchMOS

Product Details

Description

Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

Specifications

PARAMETER		SYMBOL	V60120C	UNIT
Maximum repetitive peak reverse voltage		V_RRM	120	V
Maximum average forward rectified current (Fig.1)	per device	I_F(AV)	60	A
	per diode		30
Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode		I_FSM	300
Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz		I_RRM	1.0
Voltage rate of change (rated V_R)		dV/dt	10000	V/µs
Operating junction and storage temperature range		T_J, T_STG	- 40 to + 150

Description

V60120C datasheet

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V60120C

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