V48C5C75B

Type: Isolated
Number of Outputs: 1
Voltage - Output 1: 5V
Voltage - Output 2: -
Voltage - Output 3: -
Mounting Type: Through Hole
Packaging: Bulk
Voltage - Isolation: *
Features: *
Voltage - Input (Min): 36V
Voltage - Input (Max): 75V
Power (Watts) - Manufacture Series: 75W
Package / Case: Module
Efficiency: *
Manufacturer: Vicor Corporation
Operating Temperature: -20°C ~ 100°C
Current - Output (Max): *
Series: MICRO
Size / Dimension: 2.28" L x 1.45" W x 0.54" H (57.9mm x 36.8mm x 13.7mm)


Features:

• DC input range: 36 - 75V
• Input surge withstand: 100V for 100ms
• DC output: 5V
• Programmable output: 10 to 110%
• Regulation: ±0.2% no load to full load
• Efficiency: 83%
• Maximum operating temperature:100°C at full load
• Power density: 45W/cubic inch
• Height above board: 0.43 in. (10,9 mm)
• Parallelable, with N+M fault tolerance
• Low noise ZCS/ZVS architecture

Application

telecommunications and distributed power systems


Specifications

Parameter	Rating	Unit	Notes
+In to In voltage	-0.5 to +75	Vdc
+In to In voltage	100	Vdc	<100ms
PC to In voltage	-0.5 to +7.0	Vdc
PR to In voltage	-0.5 to +7.0	Vdc
+Out to Out voltage	-0.5 to +7	Vdc
+Sense to Out voltage	-0.5 to +7	Vdc
Sense to Out voltage	1.0	Vdc
SC to Out voltage	-0.5 to +1.5	Vdc
Isolation voltage (in to out)	2000	Vrms
Isolation voltage (in to base)	1550	Vrms
Isolation voltage (out to base)	500	Vrms
Storage temperature (CGrade)	-40 to +125	°C	See part numbering chart on this page for other product grades.
Operating temperature (CGrade)	-20 to +100	°C	Baseplate
Pin soldering temperature	500 (260)	°F (°C)	<5 sec;wave solder
Pin soldering temperature	750 (390)	°F (°C)	<7 sec; hand solder
Mounting torque	5 (0.57)	in-lbs (N-m)	6 each, # 4-40 or M3

Description

The V48C5C75B uses 2nd Generation power processing, control and packaging technologies to provide the performance, flexibility and cost effectiveness expected of a mature power component. For example, a plated-cavity core transformer couples widely separated primary and secondary windings, resulting in low in-toout parasitic capacitance and noise. High frequency ZCS/ZVS switching, advanced power semiconductor packaging and thermal management provide high power density with low temperature gradients. Extensive use of silicon integration results in 1/3 the part count of a 1st Generation converter.