V437216C04VDTG-75

Features: 168 Pin Registered ECC 16,777,216 x 72 bit Oganization SDRAM ModulesUtilizes High Performance 16M x 4 SDRAM in TSOPII-54 PackagesFully PC Board Layout Compatible to INTEL'S Rev 1.2 Module SpecificationSingle +3.3V (± 0.3V) Power SupplyProgrammable CAS Latency, Burst Length, and Wrap Sequ...

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SeekIC No. : 004539858 Detail

V437216C04VDTG-75: Features: 168 Pin Registered ECC 16,777,216 x 72 bit Oganization SDRAM ModulesUtilizes High Performance 16M x 4 SDRAM in TSOPII-54 PackagesFully PC Board Layout Compatible to INTEL'S Rev 1.2 Module ...

floor Price/Ceiling Price

Part Number:
V437216C04VDTG-75
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

168 Pin Registered ECC 16,777,216 x 72 bit Oganization SDRAM Modules
Utilizes High Performance 16M x 4 SDRAM in TSOPII-54 Packages
Fully PC Board Layout Compatible to INTEL'S Rev 1.2 Module Specification
Single +3.3V (± 0.3V) Power Supply
Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are LVTTL Compatible
4096 Refresh Cycles every 64 ms
Serial Present Detect (SPD)
SDRAM Performance



Specifications

Symbol

Parameter

Limit Values

Unit

Min.

Max.

VIH

Input High Voltage

2.0

VCC+0.3

V

VIL

Input Low Voltage

0.5

0.8

V

VOH

Output High Voltage (IOUT = 2.0 mA)

2.4

-

V

VOL

Output Low Voltage (IOUT = 2.0 mA)

-

0.4

V

II(L)

Input Leakage Current, any input
(0 V < VIN < 3.6 V, all other inputs = 0V)

10

10

mA

IO(L)

Output leakage current
(DQ is disabled, 0V < VOUT < VCC)

10

10

mA




Description

The V437216C04VDTG-75 memory module is organized 16,777,216 x 72 bits in a 168 pin dual in line memory module (DIMM). The 16M x 72 registered DIMM uses 18 Mosel-Vitelic 16M x 4 ECC SDRAM. The x72 registered modules are ideal for use in high performance computer systems where increased memory density and fast access times are required.




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