V40100P Selling Leads, Price trend, V40100P DataSheet download, circuit diagram from SeekIC.com

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260 , 40 s• Component in accordance to RoHS 2002/95/ECApplicationFor use in high frequency inverters, switching ...

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V40100P: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260 , 40 s• ...

V40100P Data Sheet

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Part Number:: V40100P
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/17

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V401 evaluate
US $2.77 - 3.24 / Piece

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V40100C evaluate
Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses...
V40100C-E3 evaluate
US $.7 - .7 / Piece

DIODE 40A 100V SCHOTTKY TO220-3

Product Details

Description

Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC

Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

Specifications

PARAMETER	SYMBOL	V40100P	UNIT
Maximum repetitive peak reverse voltage	V_RRM	100	V
Maximum average forward rectified current (Fig. 1)per device per diode	I_F(AV)	40 20	A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode	I_FSM	300	A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz	I_RRM	1.0	A
Voltage rate of change (rated VR)	dV/dt	10 000	V
Operating junction and storage temperature range	T_J, T_STG	- 40 to + 150

Description

V40100P datasheet

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V40100P

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