V32FBV-L3-FFJ

V32FBV-L3-FFJ is now offering V.32bis plus V.17 FAX data pump chip sets that operate at 3.3 Volts tor.use in t. low power applications, such as laptop and notebook computer modems and PCMCIA card modems. The data pump of V32FBV-L3-FFJ supports high-speed data (V.32bis) and FAX modes at speeds up to 14,400 bits/s. When operating at 3.3V, this chip set uses over 40% less power than current 5V designs. During typical operation, the 3.3V chip set requires only 260 mW ot power. The 3.3V data pump chip sets are available in two packaging options: plastic quad flat pack (PQFP) and skinny quad flat pack The SQFP packages are ideal tor applications where space is at a premium, such as in PCMCIA card modems. This document is to be used in conjunction with the AT&T High-Speed data pump chip sets data book (MN91-063DMOS, December 1991).

The features of V32FBV-L3-FFJ/V32FBV-L3-SSS are low power consumption: typical active power consumption: 260 mW; sleep mode power consumption: 27 mW, data mode compatibilities: CCITT V.32bis: 14,400(TCM), 12,000(TCM), 7200 (TCM); CCITT V.32: 9600(TCM), 9600(QAM), 4800 (QAM), CCITT V.22bis: 2400(QAM) 1200 (DPSK), CCITT V.22: 1200(FSK), 600 (DPSK), CCITT V. : 1200(FSK), 600 (FSK), CCITT V.21; 300 (FSK), Bell 212A: 1200 (DPSK), Bell 103: 300 (FSK); FAX mode oowpatibilities: CCITT V.17: 14,400(TCM), 12,000(TCM), 7200 (TCM), CCITT V.29: 9600(QAM), 7200 (QAM), CCITT V.27ter: 4800(DPSK), 2400 (DPSK), CCITT V.21 Channel 2: 300 (FSK), Voice-thru mode with GSM coder for applications such as PC-based answering machines.

For these series of V32FBV-L3-FFJ/V32FBV-L3-SSS, stresses in excess ot the absolute maximum ratings can cause permanent damage to the absolute stress ratings only. Functional operation ot the device is not implied at these or any in excess of those given in the operational sections of the data sheet. Exposure to absolute extended periods can adversely affect device reliability. Voltage range on any pin with respect to ground VSS-0.3 to VDD+0.3V, ambient temperature range -40 to 125, storage temperature range to +125. Warning: All CMOS devices are prone to latch-up if excessive current is injected to prevent latch-up at power-up, no input pin should be subjected to input less than Vss-0.3 before Voo is applied. After power-up, inputs should not be subject to voltagegreater than VDD+0.3V or less than VSS-0.3.