Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder Dip 260 , 40 seconds• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor use in high frequ...
V30120S: Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder Dip 260 , 40 seconds...
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US $.74 - 1.11 / Piece
Schottky (Diodes & Rectifiers) 30 Amp 100 Volt Dual TrenchMOS
For use in high frequency inverters, switching power supplies, free-wheeling diodes, Oring diode, dc-to-dc converters and reverse battery protection.
PARAMETER | SYMBOL | V30120S | VI30120S | UNIT |
Maximum repetitive peak reverse voltage | VRRM | 120 | V | |
Maximum average forward rectified current (see Fig. 1) | IF(AV) | 30 | A | |
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 300 | A | |
Peak repetitive reverse current per leg at tp = 2 s, 1 kHz | IRRM | 1.0 | A | |
Voltage rate of change (rated VR) | dv/dt | 10000 | V/s | |
Operating junction and storage temperature range | TJ, TSTG | - 20 to + 150 |