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V29LC51001

Features: 128Kx8-bit OrganizationAddress Access Time: 90 nsSingle 5V± 10% Power SupplySector Erase Mode Operation512 bytes per Sector, 256 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Program Cycle Time: 30s (Max)Minimum 1,000 Erase-Program CyclesLow power dissipation Active Read Current: 2...

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SeekIC No. : 004539721 Detail

V29LC51001: Features: 128Kx8-bit OrganizationAddress Access Time: 90 nsSingle 5V± 10% Power SupplySector Erase Mode Operation512 bytes per Sector, 256 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Program ...

V29LC51001 Data Sheet

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Part Number:
V29LC51001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

 128Kx8-bit Organization
 Address Access Time: 90 ns
 Single 5V± 10% Power Supply
 Sector Erase Mode Operation
 512 bytes per Sector, 256 Sectors
    Sector-Erase Cycle Time: 10ms (Max)
   Byte-Program Cycle Time: 30s (Max)
 Minimum 1,000 Erase-Program Cycles
 Low power dissipation
   Active Read Current: 20mA (Typ)
   Active Program Current: 30mA (Typ)
   Standby Current: 100A (Max)
 Low VCC Program Inhibit Below 3.2V
 Self-timed program/erase operations
 CMOS and TTL Interface
 Packages:
   32-pin Plastic DIP
   32-pin PLCC


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Commercial

Unit

VIN

Input Voltage (input or I/O pins)

-2 to +7

V

VIN

Input Voltage (A9 pin, OE)

-2 to +13

V

VCC

Power Supply Voltage

-0.5 to +5.5

V

TSTG

Storage Temerpature (Plastic)

-65 to +125

°C

TOPR

Operating Temperature

0 to +70

°C

IOUT

Short Circuit Current(2)

200 (Max.)

mA




Description

The V29LC51001 is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention.

The V29LC51001 features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.




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