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V29C51004T

Features: 512Kx8-bit OrganizationAddress Access Time: 70, 90 nsSingle 5V± 10% Power SupplySector Erase Mode Operation16KB Boot Block (lockable)1K bytes per Sector, 512 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Write Cycle Time: 20s (Max)Minimum 10,000 Erase-Program CyclesLow power dissip...

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SeekIC No. : 004539717 Detail

V29C51004T: Features: 512Kx8-bit OrganizationAddress Access Time: 70, 90 nsSingle 5V± 10% Power SupplySector Erase Mode Operation16KB Boot Block (lockable)1K bytes per Sector, 512 Sectors Sector-Erase Cycle T...

V29C51004T Data Sheet

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Part Number:
V29C51004T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

512Kx8-bit Organization
 Address Access Time: 70, 90 ns
 Single 5V± 10% Power Supply
 Sector Erase Mode Operation
 16KB Boot Block (lockable)
 1K bytes per Sector, 512 Sectors
   Sector-Erase Cycle Time: 10ms (Max)
   Byte-Write Cycle Time: 20s (Max)
 Minimum 10,000 Erase-Program Cycles
 Low power dissipation
   Active Read Current: 20mA (Typ)
   Active Program Current: 30mA (Typ)
   Standby Current: 50A (Max)
 Hardware Data Protection
 Low VCC Program Inhibit Below 3.5V
 Self-timed write/erase operations with end-ofcycledetection
    DATA Polling
   Toggle Bit
 CMOS and TTL Interface
 Available in two versions
   V29C51004T (Top Boot Block)
   V29C51004B (Bottom Boot Block)
 Packages:
   32-pin TSOP-I
   32-pin PLCC


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Commercial

Unit

VIN

Input Voltage (input or I/O pins)

-2 to +7

V

VIN

Input Voltage (A9 pin, OE)

-2 to +13

V

VCC

Power Supply Voltage

-0.5 to +5.5

V

TSTG

Storage Temerpature (Plastic)

-65 to +125

°C

TOPR

Operating Temperature

0 to +70

°C

IOUT

Short Circuit Current(2)

200 (Max.)

mA




Description

The V29C51004T/V29C51004B is a high speed 524,288 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

The V29C51004T/V29C51004B offers a combination of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6.

The V29C51004T/V29C51004B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.

Boot block architecture enables the device to boot from a protected sector located either at the top (V29C51004T) or the bottom (V29C51004B). All inputs and outputs are CMOS and TTL compatible.

The V29C51004T/V29C51004B is ideal for applications that require updatable code and data storage.




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