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V23832-R511-M101

Features: • Infineon's highly reliable 850 nm VCSEL technology• Power supply 3.3 V• Transmitter with multistandard electrical interface• Receiver with Infineon's adjustable CML output• 12 electrical data channels• Asynchronous, AC-coupled optical link• 12 ...

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V23832-R511-M101: Features: • Infineon's highly reliable 850 nm VCSEL technology• Power supply 3.3 V• Transmitter with multistandard electrical interface• Receiver with Infineon's adjustable C...

V23832-R511-M101 Data Sheet

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Part Number:
V23832-R511-M101
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Infineon's highly reliable 850 nm VCSEL technology
• Power supply 3.3 V
• Transmitter with multistandard electrical interface
• Receiver with Infineon's adjustable CML output
• 12 electrical data channels
• Asynchronous, AC-coupled optical link
• 12 optical data channels
• Internal power monitoring for constant power budget
• Transmission data rate of up to 1250 Mbit/s per channel,
total link data rate up to 15 Gbit/s
• PIN diode array technology
• Optimized for 62.5 m multimode graded index fiber
• MT based optical port (MPO connector)
• Plug-in module with ultra low profile
• IEC Class 1M laser eye safety compliant
• OIF1) compliant
• GBE mask compliant modules available
• EMI-shielding for front panel access
• Standard link length compliant
• Unused transmitter channels can be switched off
• DC or AC coupling of input data
• Telcordia compliant


Specifications

Stress beyond the values stated below may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. Performance between absolute maximum ratings and recommended operating conditions is not guaranteed.

Parameter
Symbol
Limit Values
Unit
min.
max.
Supply Voltage
VCCVEE
0.3
4.5
V
Data/Control Input Levels1)
VIN
0.5
VCC+0.5
V
Data Input Differential Voltage2)
|VID|
2.0
V
Operating Case Temperature3)
Tcase
0
90
Storage Ambient Temperature
Tstg
40
100
Relative Humidity (non condensing)
5
95
%
ESD Resistance
(all pins to VEE, human body model)4)
(see table "Regulatory Compliance" on
Page 10)
1
kV

1) At Data and LVCMOS inputs.
2) |VID| = |(input voltage of non-inverted input minus input voltage of inverted input)|.
3) Measured at case temperature reference point (see Figure 18 on Page 31).
4) To avoid electrostatic damage, handling cautions similar to those used for MOS devices must be observed.




Description

• Relieve system bandwidth bottle necks
• Simplifies system design of the V23832-R511-M101
• Enables system upgrades in field
• Low power consumption at increased board density
• Flat package for height critical application




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