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V20100R

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Solder dip 260 , 40 s• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor use in high frequency inverters, switching power supp...

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SeekIC No. : 004539562 Detail

V20100R: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Solder dip 260 , 40 s• Component in accordance to RoH...

V20100R Data Sheet

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Part Number:
V20100R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.






Specifications

PARAMETER
SYMBOL
V20100R
VF20100R
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified total device
current (Fig. 1) per diode
IF(AV)
20
10
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load per diode
IFSM
120
A
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150





Description

V20100R & VF20100R datasheet




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