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U(B)30BCT

Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder d...

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U(B)30BCT: Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capabilityR...

U(B)30BCT Data Sheet

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Part Number:
U(B)30BCT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


Application

For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc-to-dc converters or polarity protection specifically for CCM application




Specifications

PARAMETER
SYMBOL
U(B)30BCT
U(B)30CCT
U(B)30DCT
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
Maximum average forward rectified total device
current (Fig. 1) per diode
IF(AV)
30
15
A
Peak forward surge current single half sine-wave8.3 ms
superimposed on rated load per diode10 ms
IFSM
160
150
A
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 k (contact mode)
VC
8
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150



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