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UTV8100B

Specifications Maximum Power Dissipation @ 25 290 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVceo Collector to Emitter Voltage 30Volts BVebo Emitter to Base Voltage 3.5Volts Ic Collector Current 15 Amps Maximum Temperatures Sto...

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UTV8100B: Specifications Maximum Power Dissipation @ 25 290 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVceo Collector to Emitter Voltage 30Volts BVebo...

UTV8100B Data Sheet

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Part Number:
UTV8100B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25 290 Watts
Maximum Voltage and Current  
BVces Collector to Emitter Voltage 65 Volts
BVceo Collector to Emitter Voltage 30Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 15 Amps
Maximum Temperatures  
Storage Temperature -40 to + 150
Operating Junction Temperature + 200



Description

The UTV8100B is a COMMON EMITTER transistor capable of providing 100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The transistor includes double input and output prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness.




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