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UTV65B

SpecificationsMaximum Power Dissipation @ ..............25 C 175 Watts oMaximum Voltage and CurrentBVcbo Collector to Emiter Voltage .........................50 VoltsBVceo Collector to Emitter Voltage ........................28 VoltsBVebo Emitter to Base Voltage ...............................4 Vo...

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SeekIC No. : 004539385 Detail

UTV65B: SpecificationsMaximum Power Dissipation @ ..............25 C 175 Watts oMaximum Voltage and CurrentBVcbo Collector to Emiter Voltage .........................50 VoltsBVceo Collector to Emitter Volta...

UTV65B Data Sheet

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Part Number:
UTV65B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Specifications

Maximum Power Dissipation @ ..............25 C 175 Watts o
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage .........................50 Volts
BVceo Collector to Emitter Voltage ........................28 Volts
BVebo Emitter to Base Voltage ...............................4 Volts
Ic Collector Current ...............................................10 Amps
Maximum Temperatures
Storage Temperature ...............................-40 to + 150 o C
Operating Junction Temperature .........................+ 200o C



Description

The UTV65B is a COMMON EMITTER transistor capable of providing 65 Watts Peak, Class AB, RF Output Power over the band 470-860 MHz. The transistor includes double input and output prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness.




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