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UTV100B

SpecificationsMaximum Power Dissipation @ 25.......290 WattsMaximum Voltage and CurrentBVcbo Collector to Emiter Voltage............ 65 VoltsBVceo Collector to Emitter Voltage ...........30 VoltsBVebo Emitter to Base Voltage............... 3.5 VoltsIc Collector Current ...............................

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SeekIC No. : 004539382 Detail

UTV100B: SpecificationsMaximum Power Dissipation @ 25.......290 WattsMaximum Voltage and CurrentBVcbo Collector to Emiter Voltage............ 65 VoltsBVceo Collector to Emitter Voltage ...........30 VoltsBVe...

UTV100B Data Sheet

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Part Number:
UTV100B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25.......290 Watts

Maximum Voltage and Current
BVcbo Collector to Emiter Voltage............ 65 Volts
BVceo Collector to Emitter Voltage ...........30 Volts
BVebo Emitter to Base Voltage............... 3.5 Volts
Ic Collector Current .................................15 Amps

Maximum Temperatures
Storage Temperature................... -40 to + 150
Operating Junction Temperature............. + 200


Description

The UTV100B is a COMMON EMITTER transistor capable of providing 100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The transistor includes double input and output prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness.




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