Specifications PARAMETER SYMBOL CONDITIONS MIN MAX UNIT Repetitive peak off-state voltages : VDRM,VRRM B:200D:400E:500G:600 V Average on-state current IT(AV) Half sine wave;Tlead<=83°C 0.5 A RMS on-state current IT(RMS) All conduction angles 0.8 A Non-...
UTC BT169: Specifications PARAMETER SYMBOL CONDITIONS MIN MAX UNIT Repetitive peak off-state voltages : VDRM,VRRM B:200D:400E:500G:600 V Average on-state current IT(AV) Half sine wav...
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PARAMETER | SYMBOL | CONDITIONS | MIN | MAX | UNIT |
Repetitive peak off-state voltages : | VDRM,VRRM | B:200 D:400 E:500 G:600 |
V | ||
Average on-state current | IT(AV) | Half sine wave; Tlead<=83°C |
0.5 | A | |
RMS on-state current | IT(RMS) | All conduction angles | 0.8 | A | |
Non-repetitive peak on-state current | ITSM | t=10ms t=8.3ms half sine wave; Tj=25°C prior to surge |
8 9 |
A | |
I2t for fusing | I2t | t=10ms | 0.32 | A2S | |
Repetitive rate of rise of on-state current after triggering |
DIT/dt | ITM=2A;IG=10mA; dIG/dt=100mA/ms |
50 | A/ms | |
Peak gate current | IGM | 1 | A | ||
Peak gate voltage | VGM | 5 | V | ||
Peak reverse gate voltage | VRGM | 5 | V |
The UTC BT169 is glass passivated, sensitive gate hyristors in a plastic envelope, intended for use in eneral purpose switching and phase control pplications. These devices are intended to be nterfaced directly to microcontrollers, logic integrated ircuits and other low power gate trigger circuits.