Features: * High breakdown voltage* Low collector saturation voltage* Fast switching speedSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 ...
UTCHLB122: Features: * High breakdown voltage* Low collector saturation voltage* Fast switching speedSpecifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 600 V Collector-Em...
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Parameter | Symbol | Ratings | Unit |
Collector-Base Voltage | VCBO | 600 | V |
Collector-Emitter Voltage | VCEO | 400 | V |
Emitter-Base Voltage | VEBO | 6 | V |
Collector Current (DC) | IC | 800 | mA |
Collector Current (Pulse) | ICF | 1600 | mA |
Base Current (DC) | IB | 100 | mA |
Base Current (Pulse) | IBP | 200 | mA |
Total Power Dissipation (Tc=25) | PC | 20 | W |
Junction Temperature | TJ | 150 | |
Storage Temperature | TSTG | -40 ~ +150 |
The UTCHLB122 is a medium power transistor designed for use in switching applications.