UTC2SC3358

The UTC2SC3358 is a kind of NPN silicon epitaxial transistor. It is available in TO-50 package. It has the two following features: (1) low noise and high gain; (2) high power gain.

There are some information about the absolute maximum ratings of the UTC2SC3358. (1): collector-base voltage (VCBO) is 20 V, collector-emitter voltage (VCEO) is 12 V, emitter-base voltage(VEBO) is 3 V; (2): collector current (IC) is 100 mA; (3): total power dissipation (PT) is 250 mW; (4): junction temperarure (Tj) is 150 ; (5): storage temperature (Tstg) is from -65 to 150 . Then is about electrical characters at TA is 25 . (1): the maximum collector cutoff current is 1.0 A when VCB is 10 V and IE is 0; (2): DC current gain is from 50 to 300 at VCE is 10 V and IC is 20 mA; (3): the maximum feed-back capacitance is 1.0 pF at VCB is 10 V and IC is 0; (4): the maximum noise figure of the UTC2SC3358 is 2.0 dB when VCE is 10 V, IC is 7 mA and f is 1.0 GHz.

If you want more about its electrical characteristics,please download the datasheet at www.seekic.com.