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UT9Q512K32

Features: *25ns maximum (5 volt supply) address access time* Asynchronous operation for compatible with industry standard 512K x 8 SRAMs* TTL compatible inputs and output levels , three-state bidirectional data bus* Typical radiation performance - Total dose: 50krads - SEL Immune >80 MeV-cm2/mg - ...

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SeekIC No. : 004539126 Detail

UT9Q512K32: Features: *25ns maximum (5 volt supply) address access time* Asynchronous operation for compatible with industry standard 512K x 8 SRAMs* TTL compatible inputs and output levels , three-state bidire...

UT9Q512K32 Data Sheet

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Part Number:
UT9Q512K32
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* 25ns maximum (5 volt supply) address access time
* Asynchronous operation for compatible with industry
   standard 512K x 8 SRAMs
* TTL compatible inputs and output levels , three-state
   bidirectional data bus
* Typical radiation performance
   - Total dose: 50krads
   - SEL Immune >80 MeV-cm2/mg
   - LETTH(0.25) = >10 MeV-cm2/mg
   - Saturated Cross Section (cm2) per bit, 5.0E -9
   - <1E-8 errors/bit-day, Adams 90% geosynchronous
   heavy ion
* Packaging options:
   - 68-lead dual cavity ceramic quad flatpack (CQFP) -
   (weight 7.37 grams)
* Standard Microcircuit Drawing 5962-01511
   - QML T and Q compliant part


Pinout

Connection Diagram


Specifications

SYMBOL               PARAMETER LIMITS
VDD DC supply voltage -0.5 to 7.0V
VI/O Voltage on any pin -0.5 to 7.0V
TSTG Storage temperature -65 to +150
PD Maximum power dissipation 1.0W (per byte)
TJ Maximum junction temperature2 +150
QJC Thermal resistance, junction-to-case3 10°C/W
II DC input current ±10 mA



Description

The UT9Q512K32 has three control inputs called Enable 1 (En), Write Enable (Wn), and Output Enable (G); 19 address inputs, A(18:0); and eight bidirectional data lines, DQ(7:0). En Device Enable controls device selection, active, and standby modes. Asserting En enables the device, causes IDD to rise to its active value, and decodes the 19 address inputs to select one of 524,288 words in the memory. Wn controls read and write operations. During a read cycle, G must be asserted to enable the outputs.




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