DescriptionThe UT62L12916 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits.The UT62L12916 is designed for low power application.It is particularly well suited for high density low power system application. Features of the UT62L12916 are:(1)high sp...
UT62L12916: DescriptionThe UT62L12916 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits.The UT62L12916 is designed for low power application.It is particularly ...
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The UT62L12916 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits.The UT62L12916 is designed for low power application.It is particularly well suited for high density low power system application. Features of the UT62L12916 are:(1)high speed access time:70,100ns(max.); (2)low power consumption:operating 5mA(Icc1,max.);standby :80uA(max) L-version,25 uA (max) LL-version.; (3)single 2.7-3.3Vcc power supply ; (4)all inputs and outputs TTL compatible; (5)fully static operation; (6)three-state outputs; (7)data rentention voltage:1.5V(min); (8)data byte control:LB#(I/O1-I/O8);UB#(I/O9-1/O16); (9)package:48-pin ball tiny BGA(6mm*8mm).
The absolute maximum ratings of the UT62L12916 can be summarized as:(1)terminal voltage with respect to Vss:-0.3~4.6V; (2)operating temperature:0~70; (3)storage temperature:-65~150; (4)power dissipation:1.0~1.5W; (5)dc output current:20mA; (6)soldering temperature:260.10 .sec.
The electrical characteristics(Ta=25) of the UT62L12916 can be summarized as:(1)input high voltage:2.2~Vcc+0.3V; (2)input low voltage:-0.2~0.6V; (3)input leakage current:1A; (4)output leakage current:-1~1A; (5)output high voltage:2.2V; (6)output low voltage:0.4V.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .