UT6264B

DescriptionThe UT6264B is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits.It is fabricated using high performance,high reliablility CMOS technology. Features of the UT6264CPC-35 are:(1)access time:35/70ns(max); (2)low power consumption:operating:60mA(typi...

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SeekIC No. : 004539093 Detail

UT6264B: DescriptionThe UT6264B is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits.It is fabricated using high performance,high reliablility CMOS technology. Featur...

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Part Number:
UT6264B
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Description



Description

The UT6264B is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits.It is fabricated using high performance,high reliablility CMOS technology. Features of the UT6264CPC-35 are:(1)access time:35/70ns(max); (2)low power consumption:operating:60mA(typical);standby:3mA(typical normal,2A(typical)L-version,1A(typical) LL-Version; (3)single 5V power supply ; (4)all inputs and outputs TTL compatible; (5)full static operation; (6)three state outputs ; (7)data retention voltage:2V(min.); (8)package:28-pin 600 mil PDIP;28-pin 330 mil SOP.

The absolute maximum ratings of the UT6264B can be summarized as:(1)terminal voltage with respect to Vss:-0.5~7.0V; (2)operating temperature:0~70; (3)storage temperature:-65~150; (4)power dissipation:1W; (5)dc output current:50mA; (6)soldering temperature(under 10 sec):260.

The electrical characteristics(Ta=25) of the UT6264B can be summarized as:(1)input high voltage:2.2~Vcc+0.5V; (2)input low voltage:-0.5~0.8V; (3)input leakage current:-1~1A; (4)output leakage current:-1~1A; (5)output high voltage:2.4V; (6)output low voltage:0.4V.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .




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