DescriptionThe UT6164C32 is a2,097,152-bit synchronous pipelined burst CMOS SRAM organized as 65,536 words by 32 bits.It is fabricated with high performance and high reliability CMOS technology. Features of the UT6164C32 are:(1)single 3.3V-5% and +10%power supply; (2)fast clock access time:5ns/100...
UT6164C32: DescriptionThe UT6164C32 is a2,097,152-bit synchronous pipelined burst CMOS SRAM organized as 65,536 words by 32 bits.It is fabricated with high performance and high reliability CMOS technology. Fea...
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DescriptionThe UT61128C64 is a 8,388,608-bit synchronous pipelined burst CMOS SRAM organized as 13...
The UT6164C32 is a2,097,152-bit synchronous pipelined burst CMOS SRAM organized as 65,536 words by 32 bits.It is fabricated with high performance and high reliability CMOS technology. Features of the UT6164C32 are:(1)single 3.3V-5% and +10%power supply; (2)fast clock access time:5ns/100MHz,6ns/75MHz,7ns/66MHz; (3)2clocks chip enable/2 clock chip disable operation; (4)5V-tolerant inputs,TTL/LVTTL compatible outputs; (5)synchronous pipeline operaion; (6)internally self-timed write cycle ; (7)byte write and global write control; (8)write pass-through capability; (9)burst control pin (interleavel or linear burst); (10)zz snooze mode control; (11)100-pin pqfp and tqfp package.
The absolute maximum ratings of the UT6164C32 can be summarized as:(1)voltage on Vcc supply relative to Vss:-0.5~4.6V; (2)Vin:-0.5~6V; (3)storage temperature(plastic):-55~150; (4)junction temperature:150; (5)power dissipation:1.6W; (6)short circuit output current:100mA.
The electrical characteristics(Ta=25) of the UT6164C32 can be summarized as:(1)input high (logic 1)voltage:2.0~5.5 V; (2)input low(logic 0) voltage:-0.3~0.8V; (3)input leakage current:-1~1A; (4)output leakage current:-1~1A; (5)output high voltage(3.3V I/O):2.4V; (6)output low voltage:0.4V; (7)supply voltage:3.1~3.6V.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .